Substrates employing surface-area amplification, for use in fabricating capacitive elements and other devices

ABSTRACT

A substrate that includes a base layer having a first principal surface defining a plurality of first trenches and intervening first lands, and a cover layer provided over the first principal surface of the base layer and covering the first trenches and first lands substantially conformally, wherein the surface of the cover layer remote from the first principal surface of the base layer comprises a plurality of second trenches and intervening second lands defined at a smaller scale than the first trenches and first lands. The substrate may be used to fabricate a capacitive element in which thin film layers are provided and conformally cover the second trenches and second lands of the cover layer, to create a metal-insulator-metal structure having high capacitance density.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of International applicationNo. PCT/EP2018/068632, filed Jul. 10, 2018, which claims priority toEuropean Patent Application No. 17305897.5, filed Jul. 10, 2017, theentire contents of each of which are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to the field of electrical/electronicdevice fabrication. More particularly, the invention relates tosubstrates, fabrication methods and fabricated devices that employsurface area amplification techniques.

BACKGROUND OF THE INVENTION

In various applications it can be advantageous to make use of so-called“surface-area amplification” techniques, that is, techniques to increasethe surface area of a surface without increasing the footprint coveredby the projection of the surface onto a plane. Two examples of suchapplications will be described below for the purposes of illustrationonly; these examples are not exhaustive.

For example, in a chemical sensor a particular chemical species may bedetected by virtue of the adsorption of molecules of this chemicalspecies on the surface of a layer of sensing material (e.g. a metaloxide layer). By increasing the surface area of the layer of sensingmaterial it may be possible to improve the sensitivity and/or detectionspeed of the sensor. A surface-area amplification technique in this casemay involve forming the sensing layer by depositing the sensor materialon a substrate that has a textured surface, that is, a surface that hasrelief features (e.g. projections or pillars and/or depressions ortrenches, recalling that in this field a “trench” need not be anelongated hole but may, for example, be a hole having the same lengthand breadth dimensions, such as a hole having a square or circularcross-section, as can be seen in the appended figures).

As another example, it is known to form three-dimensional capacitors bydepositing alternate electrically-conductive, electrically-insulatingand electrically-conductive materials on a textured substrate surface,i.e. on a substrate surface that includes trenches extending generallyin the thickness direction of the substrate and/or on a substratesurface which has pillar-type structures rising from it. The surfacearea of the electrode layers and dielectric layers may be amplified, andthus the capacitance density may be increased, by increasing the aspectratio of the texture features upon which the electrode layers anddielectric layers are formed: for example, by making the trenchesdeeper, and/or by making the trenches narrower so that a greater numberof trenches can be provided for a given footprint.

SUMMARY OF THE INVENTION

However, problems can arise when efforts are made to increase the degreeof surface-area amplification using the above-described techniques.

Considering the example of 3D capacitors, it may be desired to depositthe functional layers (e.g. metal-insulator-metal layers) on a substratehaving trenches that are 1-30 μm deep but only 30-100 nm wide. In thisconfined geometry it is difficult to deposit materials on the trenchsurfaces. Conventionally, techniques such as chemical vapor deposition(CVD) or atomic layer deposition (ALD) could be employed in order tointroduce a precursor into the trenches so that the precursor speciescan react with the trench wall material and form a desired layer ofmetal (or insulator). However, in extremely confined spaces, such astrenches having large aspect ratio, the diffusion rate of the precursorspecies is limited and/or uneven and this may lead to one or more of thefollowing problems:

a very slow deposition rate

a poorly conformal deposition, resulting in variation in film thicknessor film material properties,

high processing costs.

A technique that has been employed in order to form a template for usein forming 3D capacitors involves using anodization to create a texturedsubstrate surface (upon which the electrode layers and dielectric layersof the capacitor are subsequently deposited). For example, an aluminumlayer may be formed on a silicon substrate and then an anodizationprocess may be performed to create a high density of uniform,self-assembled trenches, or “pores”, in the aluminum layer. Strictlyspeaking the pores are defined in an aluminum oxide layer that formsduring the anodization process; hence the pores are said to be formed inAAO—anodic aluminum oxide. In some cases the oxide layer at the bottomsof the pores is removed so that the interior of each pore can be broughtinto communication with an electrically conductive layer provided at theside of the template remote from the mouths of the pores.

FIG. 1 illustrates a template of the above-described kind formed byanodization and shows that the footprint of this template (i.e. thesurface area occupied by a projection of the template onto a plane) ismuch smaller than the surface area provided by the internal surfaces ofthe pores, in combination with the surfaces of the lands between thepores, in the template.

Although it may be beneficial, in view of improving capacitance density,to use anodization to form a template for production of 3D capacitors,the pore depths in AAO that are produced using the above-describedtechnique are usually no greater than 10 μm because, in general, thelayer of the metal to be anodized has limited thickness. Difficultiesarise if an attempt is made to form the layer of aluminum (or othermetal for anodization) to a thickness greater than 10 or 15 μm.Typically the metal for anodization is deposited by a CVD or physicalvapor deposition (PVD) process, and attempting to deposit a layerthicker than 10-15 μm or so may result in one or more of the followingproblems:

excessively long process time (leading to loss of productivity)

requirement for more frequent cleaning of fabrication equipment (and,thus, higher maintenance costs),

poor control of the film micro-structure (overheating, re-organization).

Nevertheless, there is a desire to be able to increase the degree ofsurface amplification that can be achieved.

The present invention has been made in the light of the above problems.

The present invention provides a substrate comprising a base layerhaving a first principal surface comprising a plurality of firsttrenches and intervening first lands, characterized by a cover layer ofthickness greater than 5 μm provided on said first principal surface ofthe base layer and covering the first trenches and first landssubstantially conformally, wherein:

the surface of the cover layer remote from the first principal surfaceof the base layer comprises a plurality of second trenches andintervening second lands defined at a smaller scale than the firsttrenches and first lands,

the thickness of the first lands is greater than 1 μm, and

a ratio R=D/H is greater than 0.5 where D is the size of the free spacebetween the surfaces of the cover layer (12) covering two adjacent firstlands (4) and H is the height of the first lands.

As stated in the preceding paragraph, and as can be seen in the appendedfigures (notably FIG. 5A), the cover layer covers the first trenches andfirst lands conformally, i.e. the cover layer follows the contours ofthe underlying first principal surface of the substrate, and along itslength the cover layer has substantially constant thickness. Thus, on amacro scale, the texture of the first principal surface is reproduced bythe perimeter of the cover layer. However, the perimeter of the coverlayer is itself textured at a smaller order of magnitude; in otherwords, the second trenches and second lands are provided in the coverlayer in parts of the cover layer which overlie the first trenches, inparts of the cover layer which are formed on the side walls of the firsttrenches and in parts of the cover layer which overlie the first landsin the first principal surface of the substrate.

With current fabrication processes it is unlikely to achieve perfectconformity of the cover layer with the contours of the texture of thebase layer. However, in substrates according embodiment of the inventiona high degree of conformality is provided, preferably achieving aconformality ratio of 70% or more. The conformality ratio indicates theuniformity of the thickness of the cover layer all along the texture ofthe base layer. In cases where the conformality is ideal the cover layerexactly follows the contours in the base layer's surface. Variousapproaches may be used to quantify the conformality ratio. For example,where ThicknessMax is the maximum thickness of the cover layer,ThicknessMin is the minimum thickness of the cover layer andThicknessAvg is the average thickness of the cover layer, theconformality ratio may be defined as(ThicknessMax−ThicknessMin)/ThicknessAvg.

The above-described substrate makes use of a multi-order surface-areaamplification technique in which a cover layer having a textured surfacewhose texture features are at a first, relatively small scale, isprovided conformally over a base layer surface which is itself alsotextured and has texture features on a second, relatively larger scale.

In effect this technique combines two orders of texturing to enhance theoverall surface area provided by the substrate: a first order oftexturing is provided by the first trenches and first lands in the firstprincipal surface of the base layer, and a second order of texturing isprovided by the second trenches and second lands in the surface of thecover layer that faces away from the first principal surface of the baselayer.

By providing the textured cover layer on a base layer which itself hasappropriate, larger-scale texture features the overall surface areaprovided by the substrate can be increased compared to a case where thetextured cover layer is provided on a flat base, without increasing thefootprint of the substrate.

Compared to a substrate in which a textured cover layer is provided on aflat (untextured) base layer, the above-described substrate according tothe invention can incorporate second trenches having a lower aspectratio and yet achieve the same (or increased) overall surface area. Alower aspect ratio facilitates circulation of gaseous or liquidmaterials within the second trenches and may increase the speed and/oruniformity of deposition of material layers on the walls of the secondtrenches.

Compared to a substrate in which a textured cover layer is provided on aflat (untextured) base layer, the above-described substrate according tothe invention can incorporate a thinner cover layer and yet achieve thesame (or increased) overall surface area. In a case where the coverlayer is thinner, for example 10 μm or less, it may be possible toimprove the control of the micro-structure of the cover layer. Further,in a case where the cover layer is thinner, for example 10 μm or less,the process time required for production of the cover layer may bereduced to a practical time period and/or the requirement for cleaningof the fabrication equipment may be reduced to an acceptable level,allowing maintenance costs to be reduced.

The thickness of the cover layer is greater than 5 μm, the width of thefirst lands is greater than 1 μm, and the ratio R is greater than 0.5.By setting the width of the first lands greater than 1 μm the physicalintegrity of the first lands is promoted during the process offabricating the substrate, thus reducing the risk of breakage or shapedistortion. By setting the thickness of the cover layer greater than 5μm a substantial degree of surface amplification may be obtained. Bysetting the ratio R greater than 0.5 the ability to form the cover layerin conformity with the shape of the underlying first lands and firsttrenches is promoted. Respecting this combination of features mayprovide better uniformity in the capacitive elements and reduce the riskof defects, thus producing an enhancement in the yield of thesubstrate's fabrication process.

In certain embodiments of the invention the ratio R=D/H is in the range0.5 to 3.0, where D is the gap between two adjacent first lands coveredby the cover layer and H is the height of the first lands. In the casewhere the ratio R is in the range 0.5 to 3.0 conformity of the coverlayer to the contours of the underlying first trenches and first landsis promoted and a non-negligible improvement in surface-areaamplification factor may be achieved.

In certain embodiments of the invention the first trenches havesidewalls that are perpendicular to the first principal surface of thebase layer or extend at an angle of less than 90° to the first principalsurface. In other words, the first lands which provide the texturing ofthe base layer may have various cross-sectional shapes varying fromalmost flat, through trapezoidal, to rectangular (with the cross-sectiontaken in any plane perpendicular to the wafer surface).

The first trenches may interconnect and form a continuous contour thatintersects with itself. In this manner a continuous flow path is formedand this may improve the speed and uniformity of diffusion of gaseous orliquid materials within the first trenches, for example duringdeposition of cover layer material on the first principal surface of thebase layer.

The cover layer may be an anodized layer, for example an anodic aluminumoxide layer, and the second trenches may be pores in the anodized layer.In this case the pores in the anodized layer are liable to be nanometricin scale and this produces a significant increase in the surface areaprovided by the substrate. The first trenches and first lands in thefirst principal surface of the base layer may be micrometric in scale,enabling simpler fabrication processes to be used to texture the firstprincipal surface of the base layer.

The cover layer may be electrically insulating and a stack of three thinfilm layers may be provided over, and conformally cover, the secondtrenches and second lands. The first layer of the stack may beelectrically conductive, the second layer of the stack electricallyinsulating and the third layer of the stack electrically conductive. Thestack of three films may thus form a capacitive structure having highcapacitance density.

In a different case, the cover layer may be electrically conductive anda first thin film layer may be provided over, and conformally cover, thesecond trenches and second lands of the cover layer, the first thin filmlayer being electrically insulating or electrically conductive. Such astructure may be used, inter alia, to form a chemical sensing elementhaving a large sensing area. Alternatively, in a case where the firstthin film layer is electrically insulating and a second thin film layeris provided over, and conformally covers, the first thin film layer,this second thin film layer being electrically conductive, the layeredconfiguration may form a capacitive structure having high capacitancedensity.

The present invention further provides a capacitive element employing acapacitive structure as described above. The capacitive element may havehigh capacitance density.

The present invention still further provides a System in Package modulecomprising a substrate or capacitive element as described above,integrated with an integrated circuit. Such a System in Package modulebenefits from the improved properties of the substrate as describedabove.

The present invention yet further provides a chemical sensor element asdescribed above, in which the first thin film layer is a chemicalsensing layer adapted to adsorb selected molecules. By virtue of theincreased surface area of the sensing layer the reaction speed and/orsensitivity of the chemical sensor element may be improved.

The present invention still further provides a method of fabricating asubstrate, comprising:

forming a base layer having a first principal surface defining aplurality of first trenches and intervening first lands, and

forming a cover layer over said first principal surface of the baselayer to conformally cover the first trenches and first lands, thesurface of the cover layer remote from the first principal surface ofthe base layer comprising a plurality of second trenches and interveningsecond lands defined at a smaller scale than the first trenches andfirst lands.

By fabricating a substrate according to the above method the surfacearea provided by the substrate is amplified without needing to increasethe aspect ratio of the second trenches.

Different approaches may be used to provide the texture in the firstprincipal surface of the base layer. According to a subtractive approachthe base layer is a monolithic layer and the texture in the firstprincipal surface is created by etching this monolithic layer. Only asmall number of process steps are required for the subtractive approach.According to an alternative, additive approach, the base layer is formedby providing a first sub-base-layer which has an untextured (flat)surface and forming, on that flat surface, a second sub-base layer whichconsists of projections that constitute the first lands. The additiveapproach enables different materials to be used for the first sub-baselayer and second sub-base layer, which increases design freedom.

BRIEF DESCRIPTION OF THE DRAWINGS

Further features and advantages of the present invention will becomeapparent from the following description of certain embodiments thereof,given by way of illustration only, not limitation, with reference to theaccompanying drawings in which:

FIG. 1 is a diagram to illustrate surface-area amplification;

FIG. 2 is a diagram schematically representing a cross-section through aportion of a substrate according to an embodiment of the invention;

FIGS. 3A and 3B illustrate different patterns of texturing a base layerin substrates according to the embodiment of FIG. 2, in which:

FIG. 3A illustrates a texturing pattern in which a continuous trenchsurrounds projections/pillars rising from a root surface of the baselayer, and

FIG. 3B illustrates a texturing pattern in which discrete trenches areformed in a continuous land region;

FIG. 4(a) to FIG. 4(d) shows magnified views of part of a cover layer inthe embodiment of FIG. 2;

FIG. 5A is a diagram schematically representing a cross-section througha portion of a substrate according to an embodiment of the inventionthat uses a monolithic base layer;

FIG. 5B is a diagram schematically representing a cross-section througha portion of a substrate according to an embodiment of the inventionthat uses a base layer including first and second sub-base-layers;

FIG. 6 is a diagram schematically illustrating a functional layer formedon a cover layer of a substrate according to an embodiment of theinvention;

FIG. 7 is a diagram schematically illustrating a capacitive structureaccording to an embodiment of the invention;

FIG. 8 is a diagram schematically illustrating a capacitive structureaccording to an embodiment of the invention;

FIG. 9 is a diagram schematically illustrating a System in Packagemodule according to an embodiment of the invention; and

FIG. 10 is a flow diagram, illustrating steps in a fabrication methodaccording to an embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A substrate 1 according to an embodiment of the invention will now bedescribed with reference to FIGS. 2 to 5B.

The substrate 1 according to the embodiment of FIGS. 2 to 5B comprises abase layer 2 whose first principal surface 2A has texture featuresconsisting of first trenches 3 and first lands 4. The first trenches 3and first lands 4 are relatively large scale texture features. In thedescription below it shall be assumed that the texture features in thefirst principal surface of the base layer 2 are micrometric features,i.e. trenches and lands having dimensions of the order of micrometers.However, the invention is not limited to the case where the relativelylarge-scale texture features in the base layer 2 are micrometric.

The pattern of the texture features in the base layer 2 is notparticularly limited. According to a first patterning approach,illustrated in FIG. 3A, the texture features consist of first lands 4 inthe form of projections (or pillars) rising from a root level 2R of thebase layer, and the spaces between the projections correspond to acontinuous trench 3. The first lands 4 may be equidistant from oneanother but this is not a requirement. The first lands 4 may be arrangedat lattice points, for example on a hexagonal or cubic lattice, but thisis not a requirement. When there is regularity in the pattern of thetexture features (e.g. constant trench width and shape) then fabricationis simplified because, for example, layout and process control are madeeasier. For example, in the case where the lands 4 are equidistant andset on a regular lattice, the trench (corresponding to the space inbetween the first lands 4) has a more even width/depth, thusfacilitating the circulation of gas (etchant or deposition precursor)during the fabrication process.

In the case illustrated in FIG. 3A the projections constituting thefirst lands 4 may be formed in various shapes. The following is anon-exhaustive list of some example shapes for the first lands 4:cylindrical, parallelopipedal, pyramidal, tetragonal, or having across-sectional shape (in the plane parallel to the first principalsurface 2 a) in the form of a cross, a tripod or any otherrotationally-symmetric shape. Moreover, it is not essential for thefirst lands 4 to have a rotationally-symmetrical shape; the texture may,for example, comprise simple parallel linear trenches separated bylinear walls. In implementations using parallel linear trenchesseparated by linear walls, the circulation of gas (etchant, ordeposition precursor) during fabrication processes is facilitated in thecase where the trenches intersect to form a continuous trench.

The first trenches 3 have sidewalls 3 s which may extend at an angle ofless than or equal to 90° relative to the first principal surface 2A ofthe base layer. With sidewalls angled in this manner the first lands 4have constant cross-section, or may taper somewhat, as they extend awayfrom the root level 2R of the base layer 2. This type of shapefacilitates creation of a conformal layer when cover layer material(describe below) is deposited over the first lands 4 and first trenches3, and good conformality serves to promote uniformity of porosity thatis created in the cover layer.

According to a second patterning approach, illustrated in FIG. 3B, thetexture features consist of a continuous land region 4 having multiplediscrete trenches descending into the thickness direction of the baselayer 2. It should be mentioned that FIG. 3B is highly schematic and, inpractice, the mouths of the first trenches 3 would open out to a greaterextent than is illustrated (in order to promote conformal deposition ofthe cover later described below). The shape and spacing of the discretetrenches is not particularly limited. However, when the cross-sectionalarea of the trenches is substantially constant along the length of thetrenches this helps to promote conformality in a cover layer depositedover the land region 4 and discrete trenches.

The patterning approach illustrated by FIG. 3A makes use of a continuoustrench and, compared to the FIG. 3B case where discontinuous trenchesare involved, has an advantage in terms of improved gas circulationduring the etching process and improved conformality of a cover layerdeposited over the first lands 4 and first trenches.

FIG. 2 is a diagram schematically representing a cross-section through aportion of a substrate according to an embodiment of the invention. Ascan be seen in FIG. 2, a cover layer 12 is formed over the firstprincipal surface 2 a of the base layer 2 and conformally covers thefirst trenches 3 and first lands 4. FIGS. 4(a) to 4(d) show magnifiedviews of a portion of the cover layer 12 so that structure of this coverlayer 12 can be understood. FIG. 4(a) is a diagram representing aperspective view whereas FIG. 4(b) is a diagram representing across-sectional view. FIG. 4(c) is a TEM high-resolution image of thecover layer 12 viewed from the side and FIG. 4(d) is an image of thecover layer 12 viewed from above.

Texture features consisting of second trenches 13 and second lands 14are formed in a surface 12A of the cover layer 12 that is remote fromthe base layer 2. The second trenches 13 and second lands 14 arerelatively small scale texture features, that is, they are at a smallerscale than the texture features in the base layer 2. In other words thedimensions of the texture features in the cover layer 12 (i.e. thediameter of the second trenches 13 and the pitch of the second trenches13) are smaller than the dimensions of the texture features in the baselayer 2.

In the description below it shall be assumed that the texture featuresin the surface 12A of the cover layer 12 that is remote from the baselayer are nanometric features, i.e. trenches and lands having dimensionsof the order of nanometers, for example pores formed in AAO. However,the invention is not limited to the case where the relativelysmall-scale texture features in the cover layer 12 are nanometric.Nevertheless, it is preferred for the texture features in the surface12A of the cover layer 12 to be sub-micrometric and more preferred forthem to be nanometric. Likewise the invention is not limited to the casewhere the second trenches are formed by an anodization process, otherprocesses could be used (e.g. anisotropic etching).

Although problems may arise, as described above, if the thickness of thematerial that is anodized to form the cover layer 12 is made greaterthan about 10 or 15 μm, it is undesirable to form the pre-anodizationmaterial layer excessively thin because this restricts the overallsurface area that can be obtained in the finished structure. For certainapplications it is advantageous to set the thickness of the cover layer12 to more than 5 μm so that a substantial surface area is obtained whenfabrication of the multi-order textured substrate is complete.

The texture features in the base layer 2 may be produced using asubtractive process as shall be described with reference to FIG. 5A.More particularly, according to the present subtractive approach thetexture features are formed in a monolithic base layer 2, for example byetching the base layer using lithographic techniques to achieve thedesired patterning of the first lands 4 and first trenches 3. In thiscase the base layer 2 is “monolithic” insofar as a common layer formsthe first lands and forms a root portion from which the lands extend,but this does not exclude the possibility that one or more additionallayers may be laminated on the base layer 2.

Alternatively, the texture features in the base layer 2 may be producedusing an additive process as shall be described with reference to FIG.5B. More particularly, according to the present additive approach a baselayer 2 having the desired texture features is produced using a firstsub-base layer 2 a having a substantially planar shape (or, at least asubstantially flat, untextured surface) upon which a second sub-baselayer 2 b is formed. Portions of the second sub-base layer 2 b form thefirst lands 4. The second sub-base layer 2 b may, for example, bedeposited on the first sub-base layer 2 a as a continuous layer and thenetched to leave behind the first lands 4. Although FIG. 5B illustrates acase where there are two sub-base layers 2 a, 2 b it is to be understoodthat the desired relatively large-scale texture may be produced usingthree or more than three sub-base layers.

In the embodiment illustrated in FIGS. 2, 5A and 5B, additional layers10 and 11 are interposed between the base layer 2 and the cover layer12. The additional layer 10 is a metal layer that may be used to promoteadhesion between the base layer 2 and the material of the cover layer12. This metal layer 10 may also serve for implementing electricalinterconnection. Various materials may be used for the metal layer 10including, but not limited to aluminum, titanium or copper.

The additional layer 11 is an anodization stop layer that serves tocontrol the depth of the pores formed in the cover layer 12 in thepresent example embodiment in which the second trenches 13 are formed inthe cover layer during an anodization process. Various materials may beused for the anodization stop layer including, but not limited to:titanium or tungsten. Further information regarding the anodization stoplayer 11 is given below in relation to a fabrication method describedwith reference to FIG. 10.

Different layers (or extra layers) compared to layers 10, 11 may beinterposed between the base layer 2 and the cover layer 12 depending onthe materials used to form the base layer 2 and cover layer 12 and/ordepending on the fabrication techniques used to form the cover layer 12.Likewise, the layers 10 and 11 may be omitted in suitable cases.

Simulations have been performed to evaluate how dimensions of thetexture features of the base layer 2 affect the degree of surface-areaamplification that may be achieved.

A first set of simulations computed the surface-area amplificationratios that could be achieved in the case where a 10 μm thick AAO coverlayer is formed on a textured base layer 2, a ratio R=D/H takes a valueof 1 (where D is the size of the free space between the opposed surfacesof the cover layer 12 that covers two adjacent first lands 4, and H isthe height of the first lands 4) and different values were used a) forthe height H of the first lands (or depth of the first trenches), and b)for the width W of the first lands 4 (or the gap between adjacenttrenches).

Table 1 below shows the results of this first set of simulations andincludes surface-area amplification values “Amplification max”determined according to an optimistic computation formula whichmaximizes likely surface-area amplification as well as surface-areaamplification values according to an “optimistic” computation formulawhich maximizes the surface-area amplification ratio as well assurface-area amplification values “Amplification min” determinedaccording to a pessimistic computation formula which minimizes likelysurface-area amplification ratio. NB the height and width valuesincluded in Table 1 are expressed in micrometers.

In Table 1 the cells that are NOT within the triple bold outlined areascorrespond to combinations of width and height values that givesignificant improvement in term of surface amplification and thatprovide base layer geometries that are more realistic from a processingand/or robustness point of view. Therefore they correspond tocombinations of width and height values that are preferred in the casewhere a 10 μm thick AAO cover layer is formed on the textured base layer2, and ratio R=D/H takes a value of 1.

In Table 1 a single bold outline surrounds a group of six cells thatcorrespond to combinations of width and height values that yieldparticularly significant benefit in term of surface amplification andprovide base layer geometries that are realistic from a process androbustness point of view. Therefore they correspond to the morepreferred range of setup for the width and height parameters in the casewhere a 10 μm thick AAO cover layer is formed on the textured base layer2, and ratio R=D/H takes a value of 1.

In Table 1 a double bold outline surrounds a single cell thatcorresponds to a combination of width and height values that providesthe maximum amplification for an acceptable Height/Width ratio that isrealistic from a process and robustness point of view. Therefore itcorresponds to the setup that is currently considered to be optimal forthe process in the case where a 10 μm thick AAO cover layer is formed onthe textured base layer 2, and ratio R=D/H takes a value of 1.

A second set of simulations computed the surface-area amplificationratios that could be achieved in the case where a 10 μm thick AAO coverlayer is formed on a textured base layer 2, the ratio R=D/H takes avalue of 0.5, and different values were used a) for the height H of thefirst lands (or depth of the first trenches), and b) for the width W ofthe first lands 4.

Table 2 below shows the results of this second set of simulations and,as for table 1, shows “Amplification max” and “Amplification min” valuesdetermined according to the optimistic and pessimistic computationformulae, respectively. As for Table 1, in Table 2 the height and widthvalues are expressed in micrometers.

In Table 2 the cells that are NOT within the triple bold outlined areascorrespond to combinations of width and height values that givesignificant improvement in term of surface amplification and thatprovide base layer geometries that are more realistic from a processingand/or robustness point of view. Therefore they correspond tocombinations of width and height values that are preferred in the casewhere a 10 μm thick AAO cover layer is formed on textured base layer 2,and the ratio R=D/H takes a value of 0.5.

In Table 2 a single bold outline surrounds a group of six cells thatcorrespond to combinations of width and height values that yieldparticularly significant benefit in term of surface amplification andprovide base layer geometries that are realistic from a process androbustness point of view. Therefore they correspond to the morepreferred range of setup for the width and height parameters in the casewhere a 10 μm thick AAO cover layer is formed on textured base layer 2,and the ratio R=D/H takes a value of 0.5.

In Table 2 a double bold outline surrounds a single cell thatcorresponds to a combination of width and height values that providesthe maximum amplification for an acceptable Height/Width ratio that isrealistic from a process and robustness point of view. Therefore itcorresponds to the setup that is currently considered to be optimal forthe process in the case where a 10 μm thick AAO cover layer is formed ontextured base layer 2, and the ratio R=D/H takes a value of 0.5.

It can be seen from Tables 1 and 2 that, considering the optimisticcomputation, surface-area amplification ratios of 1.0 or better may beobtained by setting the height of the first lands 4 to at least 1 μm.

It can be seen from Tables 1 and 2 that, taking both the optimistic andthe pessimistic computations into account, surface-area amplificationratios of 1.0 or better may be obtained by setting the width of thefirst lands 4 in the range 0.5-256 μm and setting the height of thefirst lands 4 in the range 0.5-256 μm. The mechanical strength of thestructure improves when the width of the first lands is more than A goodcompromise between improved surface-area amplification ratios andstructure mechanical robustness may be obtained by setting the width ofthe first lands 4 in the range 2-8 μm and setting the height of thefirst lands 4 in the range 16.0-64.0 μm.

In certain embodiments of the invention the thickness of the cover layeris greater than 5 μm, the width of the first lands is greater than 1 μm,and the ratio R is greater than 0.5. By respecting this combination ofranges the yield of the fabrication process producing the multi-ordertextured substrate is enhanced.

In certain embodiments of the invention the ratio R=D/H is set in therange 0.5 to 3.0. In the case where the ratio R is set to 0.5 or morethe ability to form the cover layer in conformity with the shape of theunderlying first lands and first trenches is promoted. In the case wherethe ratio R is above 3.0 the gain in surface-area amplification becomesnegligible.

A multi-order textured substrate according to embodiments of the presentinvention may be used to make various electrical/electronic elements. Ingeneral, the processes for making such elements involve functionalizingthe surface 12A of the cover layer 12, that is, forming one or morelayers that on the surface 12A.

FIG. 6 illustrates a first structure that may be produced by providing athin film layer 26 on the surface of a cover layer 22 that is remotefrom the base layer. FIGS. 6-8 illustrate in simplified form only aportion of the cover layer, the base layer 2 is not represented. In thisexample the cover layer 22 is electrically conductive and the thin filmlayer 26 is provided over, and conformally covers, the second trenchesand second lands of the cover layer 22. Depending on the targetapplication the thin film layer 26 may be electrically insulating orelectrically conductive and the material for the thin film layer 26 (andits thickness) may be selected accordingly. The thin film layer 26 maybe formed on the cover layer 22 by a process appropriate to thematerials of the cover layer and thin film layer and the dimensions ofthe second trenches. For example, ALD may be used.

The structure of FIG. 6 may be used, for example, to form a chemicalsensing element. In such a case the thin film layer 26 may be formed ofa material upon which molecules of a target chemical species becomeadsorbed.

FIG. 7 illustrates a second structure that may be produced by providingthin film layers 26 and 27 on the surface of a cover layer 22 that isremote from the base layer. In this example the cover layer 22 iselectrically conductive and the thin film layers 26 and 27 are providedover, and conformally cover, the second trenches and second lands of thecover layer 22. In this example the thin film layer 26 is electricallyinsulating and the thin film layer 27 is electrically conductive. Inthis way a 3D capacitive structure is formed. A terminal 23 may beprovided connecting to a bottom electrode of the capacitive structure.Although FIG. 7 represents the terminal 23 as if it were physically incontact with the cover layer 22, in practice the terminal 23 is attachedto the base layer and connects electrically to the bottom electrode ofthe capacitive structure. A terminal 24 may be provided connecting to atop electrode in the capacitive structure. The materials for the thinfilm layers 26, 27, and the thickness of these layers, may be selectedaccording to the desired capacitance of the capacitive structure. Thethin film layers 26 and 27 may be formed on the cover layer 22 byprocesses appropriate to the materials of the cover layer and thin filmlayers and the dimensions of the second trenches. For example, ALD maybe used.

FIG. 8 illustrates a third structure that may be produced by providing astack of three thin film layers 36, 37 and 38 on the surface of a coverlayer 32 that is remote from the base layer. In this example the coverlayer 32 is electrically insulative and the stack of thin film layers36, 37, 38 are provided over, and conformally cover, the second trenchesand second lands of the cover layer 32. In this example the thin filmlayer 36 is electrically conductive, the thin film layer 37 iselectrically insulative (i.e. a dielectric), and the thin film layer 38is electrically conductive. In this way a 3D capacitive structure isformed in which the conductive layer 36 is a bottom electrode, theinsulative layer 37 is a dielectric and the conductive layer 38 is a topelectrode.

In a variant of the FIG. 8 structure, an electrical contact can be madeat the bottom of the pore, by selectively dissolving oxide formed on ananodization stop layer, such that the conductive layer 36 contacts ametal layer underlying the anodization stop layer.

A terminal 33 may be provided connecting to a bottom electrode of thecapacitive structure Although FIG. 8 represents the terminal 33 as if itwere physically in contact with the bottom electrode/conductive layer38, in practice the terminal 33 may be attached to the base layer andconnect electrically to the bottom electrode of the capacitivestructure. A terminal 34 may be provided connecting to a top electrodein the capacitive structure. The materials for the thin film layers 36,37, and 38, as well as the thickness of these layers, may be selectedaccording to the desired capacitance of the capacitive structure. Thethin film layers 36, 37 and 38 may be formed on the cover layer 32 byprocesses appropriate to the materials of the cover layer and thin filmlayers and the dimensions of the second trenches. For example, ALD maybe used.

FIG. 9 illustrates a System in Package (SIP) 100 that may be fabricatedusing a substrate according to embodiments of the present invention,which substrate 120 may implement one or multiple capacitive elements(as well as, optionally, various additional components for examplepassive components, interconnect, and so on).

In the SIP 100 of FIG. 9 a substrate 120 according to an embodiment ofthe invention is flip-chip bonded to a mounting substrate 130, which maybe a lead frame. An active die 110 including an integrated circuit 115is flip chip bonded to the substrate 120. Thus, the substrate 120according to the invention is integrated with the integrated circuit115.

FIG. 10 illustrates a method of fabricating a multi-order texturedsubstrate according to embodiments of the present invention. Theillustrated method includes forming (S1) a base layer 2 having a firstprincipal surface (2A) defining a plurality of first trenches 3 andintervening first lands (4). When the base layer 2 has been formed, acover layer 12 is formed (S2) over the first principal surface 2A of thebase layer 2 to conformally cover the first trenches 3 and first lands4. The surface 12A of the cover layer remote from the first principalsurface 2A of the base layer comprises a plurality of second trenches 13and intervening second lands 14 defined at a smaller scale than thefirst trenches and first lands.

The texture in base layer 2 may be formed in various ways, for exampleusing the subtractive process or additive process described above.

The texture in the surface 12A of the cover layer 12 may be created invarious ways. In one example fabrication process, an aluminum layer isdeposited to conformally cover the first trenches 3 and first lands 4 ofthe base layer 2, and then an anodization process is performed to createpores in the aluminum layer. In the case where an anodization stoplayer, such as the layer 11 of FIG. 2, is deposited before deposition ofthe aluminum layer, an oxide layer (e.g. TiOx, WOx, etc.) is formed atthe bottom of each pore. If desired, a selective etching process maythen be performed to etch away oxide at the bottom of the pore whileleaving Al₂O₃ on the sidewalls of the pore, for example making use of apotassium- or sodium-based buffered etch solution. In a case where ametal layer, such as layer 10 of FIG. 2, underlies the anodization stoplayer 11 this approach may allow electrical connection to be made at thebottom of the pore to the metal layer 10.

Although the present invention has been described above with referenceto certain specific embodiments, it will be understood that theinvention is not limited by the particularities of the specificembodiments. Numerous variations, modifications and developments may bemade in the specified embodiments within the scope of the appendedclaims.

1. A substrate comprising a base layer having a first principal surfacedefining a plurality of first trenches and intervening first lands,wherein the substrate includes a cover layer having a thickness greaterthan 5 μm provided over said first principal surface of the base layerand covering the first trenches and first lands substantiallyconformally, wherein: the surface of the cover layer remote from thefirst principal surface of the base layer comprises a plurality ofsecond trenches and intervening second lands defined at a smaller scalethan the first trenches and first lands, the width of the first lands isgreater than 1 μm, and a ratio R=D/H is greater than 0.5 where D is thesize of the free space between the surfaces of the cover layer coveringtwo adjacent first lands and H is the height of the first lands.
 2. Thesubstrate according to claim 1, wherein the ratio R=D/H is no more than3.0.
 3. The substrate according to claim 2, wherein the first trencheshave sidewalls extending at an angle of ≤90° to the first principalsurface of the base layer.
 4. The substrate according to claim 1,wherein the first trenches have sidewalls extending at an angle of ≤90°to the first principal surface of the base layer.
 5. The substrateaccording to claim 1, wherein the first trenches interconnect and form acontinuous contour that intersects with itself.
 6. The substrateaccording to claim 1, wherein the cover layer is an anodized layer andthe second trenches are pores in the anodized layer.
 7. The substrateaccording to claim 1, wherein the cover layer is electrically conductiveand a first thin film layer is provided over, and covers substantiallyconformally, the second trenches and second lands of the cover layer,the first thin film layer being electrically insulating or electricallyconductive.
 8. The substrate according to claim 7, wherein the firstthin film layer is electrically insulating and a second thin film layeris provided over, and covers substantially conformally, the first thinfilm layer, the second thin film layer being electrically conductive. 9.The substrate according to claim 1, wherein the cover layer iselectrically insulating and a stack of three thin film layers areprovided over, and cover substantially conformally, the second trenchesand second lands, the first layer of the stack being electricallyconductive, the second layer of the stack being electrically insulatingand the third layer of the stack being electrically conductive.
 10. Thesubstrate according to claim 9, wherein an electrical contact is made tothe first layer of the stack through the bottom of the second trenches.11. A capacitive element comprising a substrate according to claim 8.12. A system in a package module comprising a substrate according toclaim 1 monolithically integrated with an integrated circuit.
 13. Achemical sensor element comprising a substrate according to claim 8,wherein the first thin film layer is a chemical sensing layer adapted toadsorb selected molecules.
 14. A method of fabricating a substrate,comprising: forming a base layer having a first principal surfacedefining a plurality of first trenches and intervening first lands, andforming a cover layer over said first principal surface of the baselayer to cover substantially conformally the first trenches and firstlands, the surface of the cover layer remote from the first principalsurface of the base layer comprising a plurality of second trenches andintervening second lands defined at a smaller scale than the firsttrenches and first lands; wherein the width of the first lands isgreater than 1 μm, and a ratio R=D/H is greater than 0.5 where D is thesize of the free space between the surfaces of the cover layer coveringtwo adjacent first lands and H is the height of the first lands.
 15. Thefabrication method according to claim 14, wherein forming the base layercomprises etching a principal surface of the base layer to form thefirst trenches and first lands, or providing a second sub-base-layer ona first sub-base-layer, wherein the first lands and the sidewalls of thefirst trenches are formed by portions of the second sub-base-layer.